Gallium Nitride (GaN) is the perfect substitute material for silicon in power applications with medium voltage. Owing to its enhanced features like power efficiency at high voltages, greater reliability, and flexibility in power rectification, power factor correction, and amplification, GaN is being preferred over silicon in power electronics. It is emerging as the highly sought-after energy-efficient materials as far as the future is concerned. The major factor behind the growth in usage of GaN is the RF semiconductor devices industry, which is the prime focus along with various other wireless applications, thereby triggering the growth of GaN power devices market, globally.
Market Drivers & Challenges
The growth of the global market for GaN power devices can be majorly attributed to the following factors:
- Growing addressable markets for GaN power semiconductor devices like satellite communication, RADAR, and wireless applications
- Latest developments in technology
- Flourishing of GaN in RF-power electronics
Due to the new launches of GaN power semiconductor devices and technological developments, sectors like satellite communication, RADAR, and wireless applications have seen a tremendous growth, thus offering an array of opportunities. Another factor responsible for the accelerating use of GaN-enabled devices in end-user industry is increased demand and prime industry focus on various types of RF and wireless applications.
However, higher costs for industry processes and high competition from SiC in high-voltage applications are likely to hamper the growth of this market.
Market at a Glance
Estimated to grow at a CAGR of 24.5% during the forecast period, the global GaN power devices market is expected to hit USD 2.60 Billion by the end of 2022. Geographically, Japan is expected to dominate the market with highest share between 2016 and 2022, owing to rise in applications and continuous developments and innovations taking place in the semiconductor industry. Apart from this, North America and Europe are anticipated to grow at a faster rate as compared to the fastest-growing region, Asia-Pacific.
Based on application, the ICT segment is expected to register the highest CAGR from 2016-2022, followed by consumer electronics segment.
Fujitsu Ltd. (Japan), Toshiba Corp. (Japan), Koninklijke Philips N.V. (Netherlands), Texas Instruments (U.S.), EPIGAN NV (Belgium), NTT Advanced Technology Corporation (Japan), RF Micro Devices Incorporated (U.S.), Cree Incorporated (U.S.), Aixtron SE (Germany), International Quantum Epitaxy plc (U.K.), Mitsubishi Chemical Corporation (Japan), and AZZURO Semiconductors AG (Germany) among others, are the major giants operating in the global market for GaN power devices.
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Research Scope
The global GaN power devices market has been studied and predicted on the basis of following segmentation:
- Technology: Semiconductor Materials, Transistor Application Technologies
- Wafer: Manufacturing Process, Wafer Size, Design Configuration
- Device: GaN Power Discrete Market, GaN Power IC’s Market
- Product: GaN Opto Semiconductors, GaN Power Semiconductors
- Application: Computers; Information & Communication Technology; Industrial, Power, and Solar & Wind; Medical; Consumer Electronics; Automotive; Military, Aerospace, & Defense
- Region: North America, Europe, Japan, Asia-Pacific (excluding Japan), RoW
